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- 2016
-
Mark
Ultra Low Voltage Synthesizable Memories: A Trade-Off Discussion in 65nm CMOS
(
- Contribution to journal › Article
-
Mark
A 128 Kb Single-Bitline 8.4 fJ/Bit 90MHz at 0.3V 7T Sense-Amplifierless SRAM in 28 nm FD-SOI
2016) European Solid-State Circuits Conference (ESSCIRC). 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2014
-
Mark
A 65 nm Single Stage 28 fJ/cycle 0.12 to 1.2V Level-Shifter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 35 fJ/bit-access Sub-VT Memory Using a Dual-Bit Area-Optimized Standard-cell in 65 nm CMOS
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 0.28-0.8 V 320 fW D-latch for Sub-VT Memories in 65 nm CMOS
2014) FTFC(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2013
-
Mark
Dual-VT 4kb Sub-VT Memories with <1 pW/bit Leakage in 65 nm CMOS
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 65-nm CMOS Area Optimized De-synchronization Flow for sub-V-T Designs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Two Flavors of 4kb Standard-Cell Based Subvt Memory in 65 nm CMOS
2013) Swedish System-On-Chip Conference (SSoCC), 2013(
- Contribution to conference › Paper, not in proceeding
- 2012
-
Mark
Sizing of Dual-V-T Gates for Sub-V-T Circuits
2012) IEEE Subthreshold Microelectronics Conference (SubVT)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding