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2026
Mark Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
Kim, Minho ; Tran, Dat Q. ; Paskov, Plamen P. ; Choi, Uiho ; Nam, Okhyun and Darakchieva, Vanya ^LU (2026) In Applied Physics Letters 128(4).
- Contribution to journal › Article
2025
Mark Strain-stress relationships for coherent in-plane strain in heterostructures with monoclinic crystal systems : β-(Al_xGa_1−x)₂O₃ on (h0l)β-Ga₂O₃ as example
Schubert, Mathias ^LU ; Korlacki, Rafał ; Khayam, Sina ; Traouli, Yousra ; Sorensen, Preston ; Papamichail, Alexis and Darakchieva, Vanya ^LU (2025) In Physical Review Applied 24(4).
- Contribution to journal › Article
Mark 2DEG Properties of AlScN/GaN and AlYN/GaN HEMTs Determined by Terahertz Optical Hall Effect
Stanishev, Vallery ^LU ; Streicher, I. ; Papamichail, Alexis ; Rindert, Viktor ^LU ; Paskov, Plamen P. ; Leone, S. and Darakchieva, Vanya ^LU (2025) In Frontiers in Electronic Materials 5.
- Contribution to journal › Article
Mark Cryogenic Trapping Effects in GaN-HEMTs : Influences of Fe-Doped Buffer and Field Plates
Mebarki, Mohamed Aniss ^LU ; Castillo, Ragnar Ferrand-Drake Del ; Meledin, Denis ; Sundin, Erik ; Thorsell, Mattias ; Papamichail, Alexis ; Darakchieva, Vanya ^LU ; Rorsman, Niklas ; Joint, Francois and Belitsky, Victor , et al. (2025) In IEEE Transactions on Electron Devices 72(8). p.4042-4048
- Contribution to journal › Article
Mark Manipulating Electron Structure through Dual-Interface Engineering of 3C-SiC Photoanode for Enhanced Solar Water Splitting
Zeng, Hui ; Yoshioka, Satoru ; Wang, Weimin ^LU ; Han, Zhongyuan ; Ivanov, Ivan G. ; Liang, Hongwei ; Darakchieva, Vanya ^LU and Sun, Jianwu (2025) In Journal of the American Chemical Society 147(17). p.14815-14823
- Contribution to journal › Article
Mark Simulating Scaling Effects in Fully Vertical GaN FinFETs
Simko, Alexander ; Garigapati, Navya Sri ^LU ; Logotheti, Adamantia ^LU ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2025) In Physica Status Solidi (A) Applications and Materials Science 222(23).
- Contribution to journal › Article
Mark Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
Pingen, Katrin ; Wolff, Niklas ; Hinz, Alexander M. ; Sandström, Per ; Beuer, Susanne ; Kienle, Lorenz ; Darakchieva, Vanya ^LU ; Hultman, Lars ; Birch, Jens and Hsiao, Ching Lien (2025) In Applied Surface Science Advances 26.
- Contribution to journal › Article
Mark Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD
Kim, Minho ; Papamichail, Alexis ; Tran, Dat Q. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2025) In Applied Physics Letters 127(3).
- Contribution to journal › Article
Mark High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr³⁺ in β-Ga₂O₃
Rindert, Viktor ^LU ; Galazka, Zbigniew ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2025) In Applied Physics Letters 126(8).
- Contribution to journal › Article
Mark Magnetic Lyddane-Sachs-Teller Relation
Rindert, Viktor ^LU ; Darakchieva, Vanya ^LU ; Sarkar, Tapati and Schubert, Mathias ^LU (2025) In Physical Review Letters 134(8).
- Contribution to journal › Article

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