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- 2013
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Mark
Variation of strain in granular GaAs:MnAs layers
- Contribution to journal › Article
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Domain-wall controlled (Ga,Mn)As nanostructures for spintronic applications
- Contribution to journal › Article
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Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs
- Contribution to journal › Article
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Mark
Electronic- and band-structure evolution in low-doped (Ga,Mn)As
- Contribution to journal › Article
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Mark
Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mndoped GaAs
- Contribution to journal › Article
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Mark
Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates
- Contribution to journal › Article
- 2012
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Mark
Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
(2012) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 121(5-6). p.1228-1230
- Contribution to journal › Article
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Mark
Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
(2012) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 121(4). p.903-905
- Contribution to journal › Article
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Mark
Mn-induced modifications of Ga 3d photoemission from (Ga, Mn)As: evidence for long range effects
- Contribution to journal › Article
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Mark
Influence of Epitaxial Strain on Magnetic Anisotropy in (Ga,Mn)As
(2012) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 122(6). p.1004-1006
- Contribution to journal › Article