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- 2016
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Mark
Can antimonide-based nanowires form wurtzite crystal structure?
(
- Contribution to journal › Article
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Mark
Polytype Attainability in III-V Semiconductor Nanowires
(
- Contribution to journal › Article
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Mark
Nondestructive Complete Mechanical Characterization of Zinc Blende and Wurtzite GaAs Nanowires Using Time-Resolved Pump− Probe Spectroscopy
(
- Contribution to journal › Article
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Mark
Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy
(
- Contribution to journal › Article
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Mark
Few-cycle high-repetition rate OPCPA for multiphoton PEEM towards atto-PEEM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Schottky barrier and contact resistance of InSb nanowire field-effect transistors
(
- Contribution to journal › Article
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Mark
Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates
(
- Contribution to journal › Article
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Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Interface dynamics and crystal phase switching in GaAs nanowires
(
- Contribution to journal › Article