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- 2012
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Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
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Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
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Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
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Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
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Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
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Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
- 2011
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Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
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Mark
High quality InAs and GaSb thin layers grown on Si (111)
(
- Contribution to journal › Article
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Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
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Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article