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- 2011
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
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Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
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Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
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Mark
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
2011) IEEE International Electron Devices Meeting (IEDM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding
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Mark
Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
2011) 69th Device Research Conference, DRC 2011(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Coherent V-Band Pulse Generator for Impulse Radio BPSK
(
- Contribution to journal › Article