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- 2010
-
Mark
Coupling of Light into Nanowire Arrays and Subsequent Absorption
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
(
- Contribution to journal › Article
-
Mark
Correlation-induced conductance suppression at level degeneracy in a quantum dot.
(
- Contribution to journal › Article
-
Mark
Nonlinear electrical properties of Si three-terminal junction devices
(
- Contribution to journal › Article
- 2009
-
Mark
g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
(
- Contribution to journal › Article
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Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
-
Mark
Strain distributions in lattice-mismatched semiconductor core-shell nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
Field-driven geometrical phases in a time-periodic quantum system
(
- Contribution to journal › Article
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Mark
Photoemission electron microscopy using extreme ultraviolet attosecond pulse trains
(
- Contribution to journal › Article