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- 2002
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Mark
Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
(
- Contribution to journal › Article
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Mark
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
(
- Contribution to journal › Article
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Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article
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Mark
A novel frequency-multiplication device based on three-terminal ballistic junction
(
- Contribution to journal › Article
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Mark
One-dimensional steeplechase for electrons realized
(
- Contribution to journal › Article
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Mark
Designed emitter states in resonant tunneling through quantum dots
(
- Contribution to journal › Article
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Mark
Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
(
- Contribution to journal › Article
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Mark
Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
(
- Contribution to journal › Article
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Mark
Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
(
- Contribution to journal › Article
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Mark
A novel device principle for nanoelectronics
2002) In Materials Science and Engineering C: Materials for Biological Applications 19(1-2). p.417-420(
- Contribution to journal › Article