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- 2012
-
Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
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Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
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- Contribution to journal › Article
- 2011
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Mark
High quality InAs and GaSb thin layers grown on Si (111)
(
- Contribution to journal › Article
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Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
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Mark
Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
(
- Contribution to journal › Article
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Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
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Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
(
- Contribution to journal › Article
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Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
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Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article