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- 2012
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Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
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Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
(
- Contribution to journal › Article
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
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Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
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Mark
Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
(
- Contribution to journal › Article
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Mark
Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
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Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article