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- 2022
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Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
(
- Contribution to journal › Article
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
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Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
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- Contribution to journal › Article
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