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- 2014
-
Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Hard X-ray Detection Using a Single nm Diameter Nanowire
(
- Contribution to journal › Article
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Mark
Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
(
- Contribution to journal › Article
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Mark
Design of Radial Nanowire Tunnel Field-Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Monolithically-Integrated Millimetre-Wave Wavelet Transmitter With On-Chip Antenna
(
- Contribution to journal › Article
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Mark
Electrical properties of GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
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Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
(
- Contribution to journal › Article