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- 2012
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Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2012) In Nano Letters(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
Electron Transfer in Quantum-Dot-Sensitized ZnO Nanowires: Ultrafast Time-Resolved Absorption and Terahertz Study
(
- Contribution to journal › Article
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Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Thermal detection of surface plasmons on gold nanohole arrays
(
- Contribution to journal › Article
-
Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults.
(
- Contribution to journal › Article
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Mark
Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.
(
- Contribution to journal › Article
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Mark
Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.
(
- Contribution to journal › Article
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Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
(
- Contribution to journal › Article