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- 2012
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Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
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Mark
Drastically increased absorption in vertical semiconductor nanowire arrays: A non-absorbing dielectric shell makes the difference
(
- Contribution to journal › Article
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Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
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Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
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Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux
(
- Contribution to journal › Article
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Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article