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2012
Mark Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Wu, Jun ^LU ; Sjöland, Henrik ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
- Contribution to journal › Published meeting abstract
Mark Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
Gorji, Sepideh ^LU ; Ek, Martin ^LU ; Ganjipour, Bahram ^LU ; Thelander, Claes ^LU ; Johansson, Jonas ^LU ; Caroff, Philippe ^LU and Dick Thelander, Kimberly ^LU (2012) In Nano Letters 12(9). p.4914-4919
- Contribution to journal › Article
Mark High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Ärlelid, Mats ^LU ; Persson, Karl-Magnus ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(3). p.369-371
- Contribution to journal › Article
Mark Highly controlled InAs nanowires on Si(111) wafers by MOVPE
Gorji, Sepideh ^LU ; Johansson, Sofia ^LU ; Borg, Mattias ^LU ; Dick Thelander, Kimberly ^LU and Wernersson, Lars-Erik ^LU (2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Electron Tunneling and Field-Effect Devices in mm-Wave Circuits
Egard, Mikael ^LU (2012)
- Thesis › Doctoral thesis (compilation)
Mark High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
Johansson, Sofia ^LU ; Gorji, Sepideh ^LU ; Egard, Mikael ^LU ; Borg, Mattias ^LU ; Berg, Martin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353
- Contribution to journal › Article
2011
Mark RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Johansson, Sofia ^LU ; Egard, Mikael ^LU ; Gorji, Sepideh ^LU ; Borg, Mattias ^LU ; Berg, Martin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2011) In IEEE Transactions on Microwave Theory and Techniques 59(10). p.2733-2738
- Contribution to journal › Article
Mark Temperature and annealing effects on InAs nanowire MOSFETs
Johansson, Sofia ^LU ; Gorji, Sepideh ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) 17th International Conference on Insultating Films on Semiconductors 88(7). p.1105-1108
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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