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- 2022
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Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
(
- Contribution to journal › Article
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Mark
Advantage of Binary Stochastic synapses for hardware Spiking Neural Networks with realistic memristors
(
- Contribution to journal › Article
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Mark
Characteristic mode analysis of millimeter-wave series patch array
2022) p.225-226(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Nondestructive Testing Using mm-Wave Sparse Imaging Verified for Singly Curved Composite Panels
(
- Contribution to journal › Article
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Mark
Finite Element-Boundary Integral Simulation of Icing Effects on a Marine Radar Reflector
2022) 2022 3rd URSI Atlantic and Asia Pacific Radio Science Meeting (AT-AP-RASC)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
(
- Contribution to journal › Article
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Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article
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Mark
Graceful degradation to prolong lifetime of semiconductors
2022) Knowledge for Sustainable Development(
– Lund University Research Conference- Contribution to conference › Poster
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Mark
Reusing IEEE 1687-Compatible Instruments and Sub-Networks over a System Bus
2022) p.219-228(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
As-deposited ferroelectric HZO on a III–V semiconductor
(
- Contribution to journal › Article