141 – 150 of 184
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2010
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
-
Mark
High-k oxides on (100), (111)A and (111)B InAs substrates
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Gated tunnel diode in oscillator applications with high frequency tuning
(
- Contribution to journal › Article
-
Mark
60 GHz Ultra-Wideband Impulse Radio Transmitter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
20 GHz gated tunnel diode based UWB pulse generator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding