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- 2011
-
Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
-
Mark
Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux
(
- Contribution to journal › Article
-
Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
-
Mark
Electron Transport in Nanowire Quantum Devices
2010)(
- Thesis › Doctoral thesis (compilation)
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Mark
Electrical Characterization of Integrated InAs Nano-Structures
2010)(
- Thesis › Doctoral thesis (compilation)
- 2009
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
- 2008
-
Mark
Development of a Vertical Wrap-Gated InAs FET
(
- Contribution to journal › Article