Daniel Wallin (Former)
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- 2008
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Mark
Electron transport study of a lateral InGaAs quantum dot
(
- Contribution to journal › Article
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Mark
Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.052073-052073(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
(
- Contribution to journal › Article
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Mark
A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
(
- Contribution to journal › Article
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Mark
A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
(
- Contribution to journal › Article
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Mark
Electrical properties of self-assembled branched InAs nanowire junctions
(
- Contribution to journal › Article
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Mark
Nanoelectronic Devices Based on Low-Dimensional Semiconductor Structures
2008)(
- Thesis › Doctoral thesis (compilation)
- 2007
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Mark
Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
(
- Contribution to journal › Article
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Mark
Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Detection of charge states in nanowire quantum dots using a quantum point contact
(
- Contribution to journal › Article
- 2006
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Mark
Nonlinear electrical properties of three-terminal junctions
(
- Contribution to journal › Article
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Mark
Ballistic behavior of electrons in semiconductor multi-terminal junctions at room temperature
2006) 28th International Conference On The Physics Of Semiconductors, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical properties of three-terminal InAs nanowire junctions
2006) ICPS 2006, Vienna, Austria, July 24-28 2006 1(
- Contribution to conference › Paper, not in proceeding
-
Mark
Fabrication and electron transport study of three-terminal InAs nanowire junctions
2006) 14th Intl Symp “Nanostructures: Physics and Technology”, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Towards the realization of a charge detector for nanowire quantum dots
2006) 28th International Conference On The Physics Of Semiconductors, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Novel nanoelectronic device applications based on the non-linearity of three-terminal ballistic junctions
2006) 28th International Conference On The Physics Of Semiconductors, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
Electrical properties and logic function of multibranch junction structures
(
- Contribution to journal › Article
-
Mark
Microwave detection at 110 GHz by nanowires with broken symmetry
(
- Contribution to journal › Article
-
Mark
Electrical functionality of ballistic nanojunctions made from semiconductor heterostructures
2005) 21st Nordic Semicond Meet, Sundvollen, Norway (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Novel nanoelectronic triodes and logic devices with TBJs
(
- Contribution to journal › Article