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- 2010
-
Mark
Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
-
Mark
High-k oxides on (100), (111)A and (111)B InAs substrates
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
- 2007
-
Mark
Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques
(
- Contribution to journal › Article