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- 2012
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Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
- 2011
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
-
Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
-
Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
(
- Contribution to journal › Article
- 2010
-
Mark
Crystal Phase Engineering in Single InAs Nanowires.
(
- Contribution to journal › Article
-
Mark
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
(
- Contribution to journal › Article
-
Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article