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- 2012
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
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Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
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Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
Millimeter-Wave Impulse Radio
2012)(
- Thesis › Doctoral thesis (compilation)
- 2011
-
Mark
High quality InAs and GaSb thin layers grown on Si (111)
(
- Contribution to journal › Article
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Mark
Feasibility study of a mm-wave impulse radio using measured radio channels
2011) 2011 IEEE 73rd Vehicular Technology Conference (VTC Spring)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
(
- Contribution to journal › Article
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Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
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Mark
Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
(
- Contribution to journal › Article
-
Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
(
- Contribution to journal › Article