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- 2011
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Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
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- Contribution to journal › Article
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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
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- Contribution to journal › Article
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Transient studies on InAs/HfO2 nanowire capacitors
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- Contribution to journal › Article
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Temperature and annealing effects on InAs nanowire MOSFETs
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
GaSb nanowire single-hole transistor
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- Contribution to journal › Article
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Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
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- Contribution to journal › Article
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Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
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- Contribution to journal › Article
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Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
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- Contribution to journal › Article
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Schottky barriers in carbon nanotube-metal contacts
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- Contribution to journal › Article
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Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding