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- 2008
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Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
(
- Contribution to journal › Article
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InAs nanowire metal-oxide-semiconductor capacitors
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- Contribution to journal › Article
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Mark
High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
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- Contribution to journal › Article
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Mark
Improved breakdown voltages for type I InP/InGaAs DHBTs
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
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- Contribution to journal › Debate/Note/Editorial
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Mark
Characterization of GaSb nanowires grown by MOVPE
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
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- Contribution to journal › Article
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Mark
Development of a Vertical Wrap-Gated InAs FET
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- Contribution to journal › Article
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Mark
Heterogeneous integration of InAs on W/GaAs by MOVPE
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042043-042043(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III/V Nanowire FETs for CMOS?
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding