Martin Berg (Former)
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- 2013
-
Mark
1/f-noise in Vertical InAs Nanowire Transistors
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
- Contribution to journal › Article
- 2012
-
Mark
InAs Nanowires for High Frequency Electronics
(2012) GigaHertz Symposium 2012
- Contribution to conference › Abstract
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
(2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
- Contribution to journal › Published meeting abstract
- 2011
-
Mark
High quality InAs and GaSb thin layers grown on Si (111)
- Contribution to journal › Article
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
(2011) Swedish System-on-Chip Conference, SSoCC 2011
- Contribution to conference › Paper, not in proceeding
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
- Contribution to journal › Article
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