Ivan Maximov

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2010
Mark Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
Sun, Jie ^LU ; Larsson, Marcus ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2010) In Applied Physics Letters 96(16).
- Contribution to journal › Article
Mark Nonlinear electrical properties of Si three-terminal junction devices
Meng, Fantao ; Sun, Jie ^LU ; Graczyk, Mariusz ^LU ; Zhang, Kailiang ; Prunnila, Mika ; Ahopelto, Jouni ; Shi, Peixiong ; Chu, Jinkui ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2010) In Applied Physics Letters 97(24).
- Contribution to journal › Article
2009
Mark Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
Sun, Jie ^LU ; Larsson, Marcus ^LU ; Maximov, Ivan ^LU ; Hardtdegen, Hilde and Xu, Hongqi ^LU (2009) In Applied Physics Letters 94(4).
- Contribution to journal › Article
Mark Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
Sun, Jie ^LU ; Larsson, Marcus ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2009) IEEE Nanotechnology Materials and Devices Conference p.183-185
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2008
Mark Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors
Sun, Jie ^LU ; Wallin, Daniel ^LU ; Brusheim, Patrik ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.052073-052073
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP
Frimmer, Martin ; Sun, Jie ^LU ; Maximov, Ivan ^LU and Xu, Hongxing ^LU (2008) In Applied Physics Letters 93(13).
- Contribution to journal › Article
Mark A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
Sun, Jie ^LU ; Wallin, Daniel ^LU ; He, Yuhui ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2008) In Applied Physics Letters 92(1).
- Contribution to journal › Article
Mark A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
Sun, Jie ^LU ; Wallin, Daniel ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2008) In IEEE Electron Device Letters 29(6). p.540-542
- Contribution to journal › Article
Mark Electrical properties of self-assembled branched InAs nanowire junctions
Suyatin, Dmitry ^LU ; Sun, Jie ^LU ; Fuhrer, Andreas ^LU ; Wallin, Daniel ^LU ; Fröberg, Linus ^LU ; Karlsson, Lisa ^LU ; Maximov, Ivan ^LU ; Wallenberg, Reine ^LU ; Samuelson, Lars ^LU and Xu, Hongqi ^LU (2008) In Nano Letters 8(4). p.1100-1104
- Contribution to journal › Article
2007
Mark Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
Sun, Jie ^LU ; Wallin, Daniel ^LU ; Brusheim, Patrik ^LU ; Maximov, Ivan ^LU ; Wang, Z. G. and Xu, Hongqi ^LU (2007) In Nanotechnology 18(19).
- Contribution to journal › Article

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