Hongqi Xu
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- 2002
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Mark
Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
(
- Contribution to journal › Article
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Mark
A novel frequency-multiplication device based on three-terminal ballistic junction
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- Contribution to journal › Article
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Mark
Characteristics of electron transport through vertical double-barrier quantum-dot structures: Effects of symmetric and asymmetric variations of the lateral confinement potentials
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- Contribution to journal › Article
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Mark
A novel device principle for nanoelectronics
2002) In Materials Science and Engineering C: Materials for Biological Applications 19(1-2). p.417-420(
- Contribution to journal › Article
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Mark
Method of calculations for electron transport in multiterminal quantum systems based on real-space lattice models
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- Contribution to journal › Article
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Mark
Negative differential capacitance of quantum dots
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- Contribution to journal › Article
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Mark
Scattering-matrix formalism of electron transport through three-terminal quantum structures: formulation and application to Y-junction devices
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- Contribution to journal › Article
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Mark
A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics
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- Contribution to journal › Article
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Mark
Coupling between lateral modes in a vertical resonant tunneling structure
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- Contribution to journal › Article
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Mark
Quantum interference effects in electron transport through Y-branches
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding