Hongqi Xu

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2010
Mark Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.
Chen, Jianing ^LU ; Conache, Gabriela ^LU ; Pistol, Mats-Erik ^LU ; Gray, Struan ^LU ; Borgström, Magnus ^LU ; Xu, Hongxing ^LU ; Xu, Hongqi ^LU ; Samuelson, Lars ^LU and Håkanson, Ulf ^LU (2010) In Nano Letters 10(4). p.1280-1286
- Contribution to journal › Article
Mark Field-orientation dependence of the Zeeman spin splitting in (In,Ga)As quantum point contacts
Martin, T. P. ; Szorkovszky, A. ; Micolich, A. P. ; Hamilton, A. R. ; Marlow, C. A. ; Taylor, R. P. ; Linke, Heiner ^LU and Xu, Hongqi ^LU (2010) In Physical Review B (Condensed Matter and Materials Physics) 81(4).
- Contribution to journal › Article
Mark Thermoelectric efficiency at maximum power in low-dimensional systems
Nakpathomkun, Natthapon ; Xu, Hongqi ^LU and Linke, Heiner ^LU (2010) In Physical Review B (Condensed Matter and Materials Physics) 82(23).
- Contribution to journal › Article
Mark Surface-enhanced Raman scattering on dual-layer metallic grating structures
ZhiQiang, Guan ; Håkanson, Ulf ^LU ; Anttu, Nicklas ^LU ; Hong, Wei ; Xu, Hongqi ^LU ; Montelius, Lars ^LU and Xu, Hongxing ^LU (2010) In Chinese Science Bulletin 55(24). p.2643-2648
- Contribution to journal › Article
Mark Coupling of Light into Nanowire Arrays and Subsequent Absorption
Anttu, Nicklas ^LU and Xu, Hongqi ^LU (2010) International Conference on Nanoscience and Technology (ChinaNANO 2009) 10(11). p.7183-7187
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
Sun, Jie ^LU ; Larsson, Marcus ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2010) In Applied Physics Letters 96(16).
- Contribution to journal › Article
Mark Correlation-induced conductance suppression at level degeneracy in a quantum dot.
Nilsson, Henrik ^LU ; Karlström, Olov ^LU ; Larsson, M ; Caroff, Philippe ^LU ; Pedersen, Jonas ^LU ; Samuelson, Lars ^LU ; Wacker, Andreas ^LU ; Wernersson, Lars-Erik ^LU and Xu, Hongqi ^LU (2010) In Physical Review Letters 104(18).
- Contribution to journal › Article
Mark Nonlinear electrical properties of Si three-terminal junction devices
Meng, Fantao ; Sun, Jie ^LU ; Graczyk, Mariusz ^LU ; Zhang, Kailiang ; Prunnila, Mika ; Ahopelto, Jouni ; Shi, Peixiong ; Chu, Jinkui ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2010) In Applied Physics Letters 97(24).
- Contribution to journal › Article
2009
Mark g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
Larsson, Marcus ^LU ; Nilsson, Henrik ^LU ; Hardtdegen, H. and Xu, Hongqi ^LU (2009) In Applied Physics Letters 95(19).
- Contribution to journal › Article
Mark Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
Sun, Jie ^LU ; Larsson, Marcus ^LU ; Maximov, Ivan ^LU ; Hardtdegen, Hilde and Xu, Hongqi ^LU (2009) In Applied Physics Letters 94(4).
- Contribution to journal › Article

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