Lars Samuelson
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- 2013
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Mark
MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
(
- Contribution to journal › Article
- 2012
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Mark
Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.
(
- Contribution to journal › Article
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Mark
Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.
(
- Contribution to journal › Article
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Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults.
(
- Contribution to journal › Article
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Mark
Vertical oxide nanotubes connected by subsurface microchannels
(
- Contribution to journal › Article
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Mark
Spatially resolved Hall effect measurement in a single semiconductor nanowire
(
- Contribution to journal › Article
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Mark
Continuous gas-phase synthesis of nanowires with tunable properties.
(
- Contribution to journal › Article
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Mark
Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
(
- Contribution to journal › Article
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Mark
Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.
(
- Contribution to journal › Article
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Mark
Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.
2012) In ACS Nano(
- Contribution to journal › Article