Lars Samuelson
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- 2002
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Mark
Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
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- Contribution to journal › Article
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Mark
Direct observation of the molten state of nanometer-sized particles with an atomic force microscope: A feasibility study
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- Contribution to journal › Article
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Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
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- Contribution to journal › Article
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Mark
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
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- Contribution to journal › Article
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Mark
Designed emitter states in resonant tunneling through quantum dots
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- Contribution to journal › Article
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Mark
Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
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- Contribution to journal › Article
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Mark
Nanoscale tungsten aerosol particles embedded in GaAs
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- Contribution to journal › Article
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Mark
Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
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- Contribution to journal › Article
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Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
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- Contribution to journal › Article
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Mark
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
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- Contribution to journal › Article