Werner Seifert (Former)
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- 2005
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Mark
Tuning of growth of III-V semiconductor nanowires and nanotrees by analytical electron microscopy
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Aspekte des Wachstums von Nanowhiskern
2005) DGKK-Workshop Epitaxie von III/V-Halbleitern, Duisburg, Germany (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Self-assembled InAs nanowire networks
2005) MRS (Materials Research Society) Fall Meeting & Exhibit, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
MOVPE of InAs epitaxial overgrowth of W masks
2005) 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Influence of the spacer layer distance in stacked InAs/InP quantum dots, studied by cross-sectional scanning tunneling microscopy
2005) 13th Intl Congr on Thin Films and 8th Intl Conf on Atomically Controlled Surf, Interfaces and Nanostr, Stockholm, Sweden (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Direct observation of the atomic scale structure inside a nanowire
2005) 32nd Conf on the Physics and Chemistry of Semicond Interfaces, Bozeman, Mo, USA (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Importance of the particle/wire interface for defect free nanowire growth
2005) 16th Amer. Conf on Crystal Growth and Epitaxy and 12th US Biennial Workshop on Organomet Vapor Phase Epitaxy, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Epitaxielle Kristallnadeln und -bäume
2005) DGKK-Jahrestagung, Köln, Germany (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
A new understanding of au-assisted growth of III-V semiconductor nanowires
(
- Contribution to journal › Article
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Mark
Nanometer-scale two-terminal semiconductor memory operating at room temperature
(
- Contribution to journal › Article
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Mark
The influence of lysine on InP(001) surface ordering and nanowire growth
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- Contribution to journal › Article
- 2004
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Mark
Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy
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- Contribution to journal › Article
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Mark
Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events
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- Contribution to journal › Article
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Mark
Electrical properties of InAs-based nanowires
2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials 723. p.449-452(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques
(
- Contribution to journal › Article