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- 2005
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Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article
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Mark
A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
(
- Contribution to journal › Article
-
Mark
MOVPE of InAs epitaxial overgrowth of W masks
2005) 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
(
- Contribution to journal › Article
- 2003
-
Mark
Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
(
- Contribution to journal › Article
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Mark
Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
(
- Contribution to journal › Article
-
Mark
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
(
- Contribution to journal › Article
- 2002
-
Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
(
- Contribution to journal › Article
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Mark
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
(
- Contribution to journal › Article
-
Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article