Reine Wallenberg
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- 2021
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Mark
Coherently strained and dislocation-free architectured AlGaN/GaN submicron-sized structures
(
- Contribution to journal › Article
- 2020
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
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Mark
Dislocation-Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications
(
- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
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Mark
Electron channelling : challenges and opportunities for compositional analysis of nanowires by TEM
(
- Contribution to journal › Article