High-Performance InAs Nanowire MOSFETs
(2012) In IEEE Electron Device Letters 33(6). p.791-793- Abstract
- In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2858283
- author
- Dey, Anil LU ; Thelander, Claes LU ; Lind, Erik LU ; Dick Thelander, Kimberly LU ; Borg, Mattias LU ; Borgström, Magnus LU ; Nilsson, Peter LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- IEEE Electron Device Letters
- volume
- 33
- issue
- 6
- pages
- 791 - 793
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000305835000017
- scopus:84861674649
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2012.2190132
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 17de7e65-eb0c-4b2e-8669-3ec505795208 (old id 2858283)
- date added to LUP
- 2016-04-01 13:42:08
- date last changed
- 2023-11-12 20:34:30
@article{17de7e65-eb0c-4b2e-8669-3ec505795208, abstract = {{In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.}}, author = {{Dey, Anil and Thelander, Claes and Lind, Erik and Dick Thelander, Kimberly and Borg, Mattias and Borgström, Magnus and Nilsson, Peter and Wernersson, Lars-Erik}}, issn = {{0741-3106}}, language = {{eng}}, number = {{6}}, pages = {{791--793}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{High-Performance InAs Nanowire MOSFETs}}, url = {{https://lup.lub.lu.se/search/files/3540295/3171724.pdf}}, doi = {{10.1109/LED.2012.2190132}}, volume = {{33}}, year = {{2012}}, }