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Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V

Persson, Karl-Magnus LU ; Berg, Martin LU ; Borg, Mattias LU ; Wu, Jun LU ; Sjöland, Henrik LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowire, Transistor, FET, MOSFET, InAs
in
IEEE Electron Device Letters
pages
195 - 196
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
Device Research Conference (DRC), 2012 70th Annual
external identifiers
  • scopus:84866910921
ISSN
0741-3106
DOI
10.1109/DRC.2012.6256966
project
EIT_WWW Wireless with Wires
language
English
LU publication?
yes
id
71f2b9e7-75be-4d61-ac87-52e06e7a18d4 (old id 4330783)
alternative location
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6256966
date added to LUP
2014-02-25 09:59:08
date last changed
2017-10-01 04:01:46
@misc{71f2b9e7-75be-4d61-ac87-52e06e7a18d4,
  author       = {Persson, Karl-Magnus and Berg, Martin and Borg, Mattias and Wu, Jun and Sjöland, Henrik and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {Nanowire,Transistor,FET,MOSFET,InAs},
  language     = {eng},
  note         = {Conference Abstract},
  pages        = {195--196},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V},
  url          = {http://dx.doi.org/10.1109/DRC.2012.6256966},
  year         = {2012},
}