Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4330783
- author
- Persson, Karl-Magnus LU ; Berg, Martin LU ; Borg, Mattias LU ; Wu, Jun LU ; Sjöland, Henrik LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowire, Transistor, FET, MOSFET, InAs
- in
- IEEE Electron Device Letters
- pages
- 195 - 196
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- Device Research Conference (DRC), 2012 70th Annual
- conference location
- University Park, PA, United States
- conference dates
- 2012-06-18
- external identifiers
-
- scopus:84866910921
- ISSN
- 0741-3106
- DOI
- 10.1109/DRC.2012.6256966
- project
- EIT_WWW Wireless with Wires
- language
- English
- LU publication?
- yes
- id
- 71f2b9e7-75be-4d61-ac87-52e06e7a18d4 (old id 4330783)
- alternative location
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6256966
- date added to LUP
- 2016-04-01 13:00:51
- date last changed
- 2024-04-17 02:49:02
@misc{71f2b9e7-75be-4d61-ac87-52e06e7a18d4, author = {{Persson, Karl-Magnus and Berg, Martin and Borg, Mattias and Wu, Jun and Sjöland, Henrik and Lind, Erik and Wernersson, Lars-Erik}}, issn = {{0741-3106}}, keywords = {{Nanowire; Transistor; FET; MOSFET; InAs}}, language = {{eng}}, note = {{Conference Abstract}}, pages = {{195--196}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V}}, url = {{https://lup.lub.lu.se/search/files/3105329/4330817.pdf}}, doi = {{10.1109/DRC.2012.6256966}}, year = {{2012}}, }