Modelling radiation damage to pixel sensors in the ATLAS detector
(2019) In Journal of Instrumentation 14(6).- Abstract
- Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and... (More)
- Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2). © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. (Less)
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- publishing date
- 2019
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors, Electric fields, Electron emission, Ionizing radiation, Radiation damage, Readout systems, Silicon detectors, ATLAS experiment, Charge collection efficiency, Interaction points, Modelling and simulations, Nonionizing radiation, Radiation hard detectors, Silicon pixel detector, Pixels
- in
- Journal of Instrumentation
- volume
- 14
- issue
- 6
- article number
- P06012
- publisher
- IOP Publishing
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- scopus:85070359632
- ISSN
- 1748-0221
- DOI
- 10.1088/1748-0221/14/06/P06012
- language
- English
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- yes
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- 5d74c669-5ccc-465f-a094-f3176ed037b5
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- https://www.scopus.com/inward/record.uri?eid=2-s2.0-85070359632&doi=10.1088%2f1748-0221%2f14%2f06%2fP06012&partnerID=40&md5=3319a5c7e8a00936b6aeaf8390a2b9da
- date added to LUP
- 2019-08-28 11:39:20
- date last changed
- 2023-04-09 22:07:05
@article{5d74c669-5ccc-465f-a094-f3176ed037b5, abstract = {{Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2). © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.}}, author = {{Aaboud, M and Åkesson, Torsten and Bocchetta, Simona and Bryngemark, Lene and Corrigan, Eric and Doglioni, Caterina and Gregersen, Kristian and Brottmann Hansen, Eva and Hedberg, Vincent and Jarlskog, Göran and Kalderon, Charles and Kellermann, Edgar and Konya, Balazs and Lytken, Else and Mankinen, Katja and Marcon, Caterina and Mjörnmark, Ulf and Mullier, Geoffrey and Pöttgen, Ruth and Poulsen, Trine and Skorda, Eleni and Smirnova, Oxana and Zwalinski, L.}}, issn = {{1748-0221}}, keywords = {{Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Radiation-hard detectors; Solid state detectors; Electric fields; Electron emission; Ionizing radiation; Radiation damage; Readout systems; Silicon detectors; ATLAS experiment; Charge collection efficiency; Interaction points; Modelling and simulations; Nonionizing radiation; Radiation hard detectors; Silicon pixel detector; Pixels}}, language = {{eng}}, number = {{6}}, publisher = {{IOP Publishing}}, series = {{Journal of Instrumentation}}, title = {{Modelling radiation damage to pixel sensors in the ATLAS detector}}, url = {{http://dx.doi.org/10.1088/1748-0221/14/06/P06012}}, doi = {{10.1088/1748-0221/14/06/P06012}}, volume = {{14}}, year = {{2019}}, }