Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Modelling radiation damage to pixel sensors in the ATLAS detector

Aaboud, M ; Åkesson, Torsten LU orcid ; Bocchetta, Simona LU ; Bryngemark, Lene LU ; Corrigan, Eric LU ; Doglioni, Caterina LU ; Gregersen, Kristian LU ; Brottmann Hansen, Eva LU ; Hedberg, Vincent LU and Jarlskog, Göran LU , et al. (2019) In Journal of Instrumentation 14(6).
Abstract
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and... (More)
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2). © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and , et al. (More)
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; and (Less)
author collaboration
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors, Electric fields, Electron emission, Ionizing radiation, Radiation damage, Readout systems, Silicon detectors, ATLAS experiment, Charge collection efficiency, Interaction points, Modelling and simulations, Nonionizing radiation, Radiation hard detectors, Silicon pixel detector, Pixels
in
Journal of Instrumentation
volume
14
issue
6
article number
P06012
publisher
IOP Publishing
external identifiers
  • scopus:85070359632
ISSN
1748-0221
DOI
10.1088/1748-0221/14/06/P06012
language
English
LU publication?
yes
id
5d74c669-5ccc-465f-a094-f3176ed037b5
alternative location
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85070359632&doi=10.1088%2f1748-0221%2f14%2f06%2fP06012&partnerID=40&md5=3319a5c7e8a00936b6aeaf8390a2b9da
date added to LUP
2019-08-28 11:39:20
date last changed
2023-04-09 22:07:05
@article{5d74c669-5ccc-465f-a094-f3176ed037b5,
  abstract     = {{Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2). © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.}},
  author       = {{Aaboud, M and Åkesson, Torsten and Bocchetta, Simona and Bryngemark, Lene and Corrigan, Eric and Doglioni, Caterina and Gregersen, Kristian and Brottmann Hansen, Eva and Hedberg, Vincent and Jarlskog, Göran and Kalderon, Charles and Kellermann, Edgar and Konya, Balazs and Lytken, Else and Mankinen, Katja and Marcon, Caterina and Mjörnmark, Ulf and Mullier, Geoffrey and Pöttgen, Ruth and Poulsen, Trine and Skorda, Eleni and Smirnova, Oxana and Zwalinski, L.}},
  issn         = {{1748-0221}},
  keywords     = {{Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Radiation-hard detectors; Solid state detectors; Electric fields; Electron emission; Ionizing radiation; Radiation damage; Readout systems; Silicon detectors; ATLAS experiment; Charge collection efficiency; Interaction points; Modelling and simulations; Nonionizing radiation; Radiation hard detectors; Silicon pixel detector; Pixels}},
  language     = {{eng}},
  number       = {{6}},
  publisher    = {{IOP Publishing}},
  series       = {{Journal of Instrumentation}},
  title        = {{Modelling radiation damage to pixel sensors in the ATLAS detector}},
  url          = {{http://dx.doi.org/10.1088/1748-0221/14/06/P06012}},
  doi          = {{10.1088/1748-0221/14/06/P06012}},
  volume       = {{14}},
  year         = {{2019}},
}