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- 2011
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Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
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Mark
Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism
(
- Contribution to journal › Article
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Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
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- Contribution to journal › Article
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Mark
Parameter space mapping of InAs nanowire crystal structure
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- Contribution to journal › Article
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
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Mark
Control of III-V nanowire crystal structure by growth parameter tuning
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- Contribution to journal › Article
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Doping Incorporation in InAs nanowires characterized by capacitance measurements
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- Contribution to journal › Article
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Correlation-induced conductance suppression at level degeneracy in a quantum dot.
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- Contribution to journal › Article
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Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
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- Contribution to journal › Article
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Mark
Diameter Dependence of the Wurtzite-Zinc Blende Transition in InAs Nanowires
(
- Contribution to journal › Article