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- 2014
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Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
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Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
(
- Contribution to journal › Article
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Mark
Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article
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Mark
Design of Radial Nanowire Tunnel Field-Effect Transistors
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
(
- Contribution to journal › Article
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Mark
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
(
- Contribution to journal › Article