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- 2011
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
-
Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
-
Mark
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding
- 2010
-
Mark
Crystal Phase Engineering in Single InAs Nanowires.
(
- Contribution to journal › Article
-
Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article