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- 2016
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Mark
Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide
(
- Contribution to journal › Article
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Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
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- Contribution to journal › Article
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Mark
Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
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- Contribution to journal › Article
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Mark
Schottky barrier and contact resistance of InSb nanowire field-effect transistors
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- Contribution to journal › Article
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Mark
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
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- Contribution to journal › Article
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Mark
Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process
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- Contribution to journal › Article
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Probe of local impurity states by bend resistance measurements in graphene cross junctions
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- Contribution to journal › Article
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InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition
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- Contribution to journal › Article
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Mark
Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
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- Contribution to journal › Article
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Mark
Feasibility studies of time-like proton electromagnetic form factors at P ¯ ANDA at FAIR
(
- Contribution to journal › Article