1 – 6 of 6
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2016
-
Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
Roll, Guntrade LU ; Mo, Jiongjiong LU ; Lind, Erik LU
; Johansson, Sofia
LU
and Wernersson, Lars Erik
LU
(2016)
In IEEE Transactions on Device and Materials Reliability
16(2).
p.112-116
- Contribution to journal › Article
- 2015
-
Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
Roll, Guntrade LU ; Mo, Jiongjiong LU ; Lind, Erik LU
; Johansson, Sofia
LU
and Wernersson, Lars-Erik
LU
(2015)
In Applied Physics Letters
106(20).
- Contribution to journal › Article
- 2014
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
Roll, Guntrade LU ; Lind, Erik LU
; Egard, Mikael
; Johansson, Sofia
LU
; Ohlsson, Lars
LU
and Wernersson, Lars-Erik
LU
(2014)
In IEEE Electron Device Letters
35(2).
p.181-183
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
Zota, Cezar LU ; Roll, Guntrade LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
(2014)
In IEEE Transactions on Electron Devices
61(12).
p.4078-4083
- Contribution to journal › Article
-
Mark
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
Mo, Jiongjiong LU ; Lind, Erik LU
; Roll, Guntrade
LU
and Wernersson, Lars-Erik
LU
(2014)
In Applied Physics Letters
105(3).
- Contribution to journal › Article
- 2013
-
Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
Roll, Guntrade LU ; Egard, Mikael LU ; Johannson, Sofia LU ; Ohlsson, Lars LU
; Wernersson, Lars Erik
LU
and Lind, Erik
LU
(2013)
2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding