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- 2005
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Mark
One-dimensional epitaxial compound semiconductor structures
2005) 10th Intl Symp on Advanced Physical Fields: Fabrication of Nanostr, Tsukuba, Japan (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques
(
- Contribution to journal › Article
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Mark
Charging control of InP/GaInP quantum dots by heterostructure design
(
- Contribution to journal › Article
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Mark
Photoexcitation of excitons in self-assembled quantum dots
(
- Contribution to journal › Article
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Mark
Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
(
- Contribution to journal › Article
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Mark
Defect-free InP nanowires grown in [001] direction on InP(001)
(
- Contribution to journal › Article
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Mark
Electrical properties of InAs-based nanowires
2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials 723. p.449-452(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy
(
- Contribution to journal › Article
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Mark
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
(
- Contribution to journal › Article
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Mark
Spectroscopic studies of random telegraph noise in small InP quantum dots in GaxIn1-xP
(
- Contribution to journal › Article