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- 2018
-
Mark
Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan(
- Contribution to conference › Abstract
-
Mark
CMOS Integration Based on All-III-V Materials
2018) Swedish Microwave Days 2018(
- Contribution to conference › Abstract
-
Mark
Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
2018) Compound Semiconductor Week 2018(
- Contribution to conference › Abstract
-
Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
(
- Contribution to journal › Article
-
Mark
Pulse-Distortion Analysis for Millimeter-Wave Time-Domain Material Identification
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
-
Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Increased absorption in InAsSb nanowire clusters through coupled optical modes
(
- Contribution to journal › Article
-
Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
2017) p.38-41(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article