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- 2021
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
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Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
- 2020
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Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
(
- Contribution to journal › Article