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- 2013
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Mark
A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow.
(
- Contribution to journal › Article
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Mark
Self-catalyzed MBE grown GaAs/GaAsxSb1-x core-shell nanowires in ZB and WZ crystal structures
(
- Contribution to journal › Article
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Mark
Exploring the diameter limitation in III-Sb heterostructure growth
2013) 7th Nanowire growth workshop, 2013(
- Contribution to conference › Abstract
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Mark
Zero-bias conductance peaks in Superconductor-Semiconductor Hybrid Quantum Devices: with and without Majorana fermions
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
(
- Contribution to journal › Article
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Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
-
Mark
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
(
- Contribution to journal › Article