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- 2014
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Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Measurements of light absorption efficiency in InSb nanowires
(
- Contribution to journal › Article
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Mark
High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
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Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
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Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
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- Contribution to journal › Article
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Mark
Hard X-ray Detection Using a Single nm Diameter Nanowire
(
- Contribution to journal › Article