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- 2010
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Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
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Mark
Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
(
- Contribution to journal › Article
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Mark
Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
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Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
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Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
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Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
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Mark
Correlation-induced conductance suppression at level degeneracy in a quantum dot.
(
- Contribution to journal › Article
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Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter