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- 2014
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Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article
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Mark
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
(
- Contribution to journal › Article
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Mark
Monolithically-Integrated Millimetre-Wave Wavelet Transmitter With On-Chip Antenna
(
- Contribution to journal › Article
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Mark
Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
(
- Contribution to journal › Article
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Mark
Design of Radial Nanowire Tunnel Field-Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
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Mark
Electrical properties of GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article