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- 2011
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Mark
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
2011) IEEE International Electron Devices Meeting (IEDM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
(
- Contribution to journal › Article
-
Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
(
- Contribution to journal › Article
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding