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- 2013
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Mark
Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)
(
- Contribution to journal › Article
- 2012
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Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
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Mark
Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.
2012) In ACS Nano(
- Contribution to journal › Article
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Mark
Polytypic InAs Nanowire Studies Using Scanning Tunneling Microscopy
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
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Mark
Doping profile of InP nanowires directly imaged by photoemission electron microscopy
(
- Contribution to journal › Article
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Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
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Mark
Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs
2011) 27th North American Molecular Beam Epitaxy Conference of the American-Vacuum-Society 29(3). p.03-104(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs
(
- Contribution to journal › Letter
- 2010
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Mark
New Flexible Toolbox for Nanomechanical Measurements with Extreme Precision and at Very High Frequencies.
(
- Contribution to journal › Article